The IKW40N120H3 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.
	英飛凌K40H1203 / IKW40N120H3是英飛凌第三代1200V高開(kāi)關(guān)速度IGBT單管, 能夠完美替代K40T120 / K40T1202 ,專用于焊接、太陽(yáng)能發(fā)電逆變器和UPS等IGBT高頻應(yīng)用領(lǐng)域。
	
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			Low switching losses for high efficiency
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			Fast switching behaviour with low EMI emissions
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			Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
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			Short circuit capability
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			Excellent performance
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			Low switching and conduction losses
 
	
		K40H1203 / IKW40N120H3 特點(diǎn):
	•最高結(jié)溫度為175℃ 
	•非常低VCEsat
	•低開(kāi)關(guān)損耗
	•較高的開(kāi)關(guān)堅(jiān)韌性
	•內(nèi)置快速恢復(fù)反并聯(lián)二極管
	•根據(jù)JEDEC1合格為目標(biāo)
	•無(wú)鉛引腳電鍍符合RoHS標(biāo)準(zhǔn)
	 
	應(yīng)用范圍:
	•UPS(不中斷電源/不間斷電源)
	•焊接器
	•太陽(yáng)能發(fā)電用逆變器
	
	IKW40N120H3 產(chǎn)品信息:
	
		集電極直流電流: 40A
	
		集電極發(fā)射飽和電壓, Vce: 2.4V
	
		晶體管封裝類型: TO-247
	
		功耗 Pd: 483W
	
		產(chǎn)品范圍: -
	
		針腳數(shù): 3引腳
	
		工作溫度最高值: 175°C
	
		集電極發(fā)射電壓, Vceo: 1.2kV
		
		
			原產(chǎn)地: Philippines
		
			進(jìn)行最后一道重要生產(chǎn)流程所在的國(guó)家
		
			 
		
			RoHS 合規(guī):  是
		
			稅則號(hào): 85412900
		
			重量(千克): .00542